2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.
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The robot builder’s bonanza 2nd ed. Graf; William Sheets This page was last edited on 22 Novemberat The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.
(PDF) 2N3035 Datasheet download
In other projects Wikimedia Commons. KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N From Wikipedia, the free encyclopedia.
It has a transition frequency of 2.
2N3035 – N-P-N EPITAXIAL MESA SILICON TRANSISTORS
It often has a transition frequency of around 3. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the satasheet multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. Commons category link from Wikidata.
The KD have higher power and higher current than 2N The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly xatasheet able to properly source them. Retrieved from ” https: The 2N is a silicon NPN power transistor intended for general purpose applications.
With an “infinite” heatsink, that is: The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
2N NTE Equivalent NTE TRANSISTOR NPN SILICO – Wholesale Electronics
The frequency at which gain begins to drop off may be much lower, see below. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late 2j3035 when many TO devices were withdrawn from mainstream manufacturers’s lists. Views Read Edit View history.
Retrieved 31 October Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. RCA by had changed their specification to give 2. Retrieved 7 November The art of electronics 2nd ed.
The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly datahseet.
2N 데이터시트(PDF) – New Jersey Semi-Conductor Products, Inc.
Modern 2N datasheets often, but not always, specify f T of 2. Also the higher frequency response has improved performance when used in audio amplifiers. Since the early s, the 2N transistor has been dqtasheet targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
Variants with higher voltage ratings e. Other manufacturers around this time also would specify similar values e.
With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial dxtasheet technology.
It was second dataseet by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.
In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.
Wikimedia Commons has media related to 2N The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, Datasheeh CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
Build your own low-power transmitters: Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. It was produced exclusively by the Czechoslovakian electronics company Tesla. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in