SKHynix had lots and lots of memory goodies at IDF including some vertical/3D NAND flash, LPDDR3, and HBM modules. This material is proprietary of SK hynix Inc. and subject to change without TSV is a revolutionary technology for overcoming the bottleneck. On the Mechanical Stresses of Cu Through-Silicon Via (TSV) Samples Fabricated by SK Hynix vs. SEMATECH – Enabling Robust and Reliable 3-D.

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To this date, more than patent families relating to TSV stacked memory technology have been published. That said it is the future of memory so make sure hynic are familiar with this little grey blob, you will be seeing lots of them in the near future. It is pretty mind bending stuff.

Sep 23, by Charlie Demerjian. Could it get better? The following two tabs change content below. The top right box is the interesting one, labeled Ci-MCP. The report provides a ranking and analysis of the relative strength of the top patent holders derived from their portfolio size, countries of patents filings, current legal status of patents, segmentation of their IP portfolio.

Username or Email Address. Both companies have settled on 24 cells deep, exactly the break point that AMAT said would be economically feasible to make the switch. Once Hynis makes the bit leap this will matter hyynix lot.

ForSamsung predicts on two future paths: The deep ysv of the patent portfolios held by key players includes a point on relevant technologies for future developments of TSV stacked memories.

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Mount this on to your phone or tablet SoC and off you go, no other memory needed in the system. He is a technologist and analyst specializing in semiconductors, system and network architecture. Charlie is also a council member with Gerson Lehman Group. Did you know that you can access all our past subscription-only articles with a simple Student Membership for USD per year? Add to Cart Checkout Added to cart. The USA and Korea represent the main countries of patent filings, while Europe seems to represent only few interest for patent applicants.

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Hynix shows off bleeding edge 3D NAND, TSV based DDR3, and HBM modules – SemiAccurate

We observed a decrease of patent applications the last two years, while the bynix products appeared on the market. Further this leads to the reduction of power consumption as well as parasitic resistance and capacitance. This report provides a complete and deep understanding of IP litigation history including litigated patents families and inter-partes reviews. The memory market has been impacted by the increased difficultly in producing at more compact geometries.

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Hynix shows off bleeding edge 3D NAND, TSV based DDR3, and HBM modules

All main applicants in TSV stacked memory technologies are microelectronics giants. Like what you may wonder?

Hynxi Demerjian Roving engine of chaos and snide remarks at SemiAccurate. If you want both bleeding edge tech and a company that actually will talk to journalists, Hynix was the place to be. As head writer of SemiAccurate.

Mobile formats by the 1. First patents involving TSV stacked memories were already published in the s, but the development of the technology really started in the mids with a significant increase of patent publications since then.

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S A Have you signed up for our newsletter yet? A focus is also provided on key challenges for TSV stacked memory technology error repair, multi-channel package, thermal dissipation, alignment accuracy, connection failure and solutions found in patents owned by key players.

Most of them are American or Asian. Have you signed up for our newsletter yet? Main challenges for the future remain the quest for higher bandwidth and density integration. The patent landscape for TSV stacked memory analyzed in this report is quite closed with microelectronics giants and dominated by American and Asian patent applicants. Instead of putting transistors on a flat plane with wiring in the third dimension, Hynix, like Samsung, is stacking the cells vertically.

HBM3 with higher capacity and higher bandwidth and low cost HBM with significant cost savings arrive from the narrower width allowing for simpler memory stacks with less TSVs. Latest posts by Charlie Demerjian see all. In the semiconductor industry, 3D integration using through-silicon via TSV has been considered to be a promising way for improving performance and density instead of conventional device scaling.

This database allows multi-criteria searches and includes patent publication number, hyperlinks to the original documents, priority date, title, abstract, patent assignees and legal status for each member of the patent family.